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| (R) STPS20H100CT/CF/CG/CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGECURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB Insulating Voltage = 2500V(RMS) Capacitance = 45 pF DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Tc = 160C TO-220AB D2PAK / I2PAK ISOWATT220AB Tc = 145C per diode per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 250 1 3 - 65 to + 175 175 10000 Unit V A A A2 A1 A1 A2 K 2 x 10 A 100 V 175C 0.64 V A1 K A2 A2 A1 K A2 A1 K ISOWATT220AB STPS20H100CF TO-220AB STPS20H100CT K D2PAK STPS20H100CG I2PAK STPS20H100CG-1 IFSM IRRM IRSM T stg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square A A A C C V/s Maximum operating junction temperature * Critical rate of rise of reverse voltage *: 1 dPtot thermal runaway condition for a diode on its own heatsink < Rth(j-a) dTj 1/7 July 1999 - Ed: 3B STPS20H100CT/CF/CG/CG-1 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / I PAK ISOWATT220AB TO-220AB / D PAK / I PAK ISOWATT220AB Rth (c) TO-220AB / D PAK / I PAK ISOWATT220AB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2 2 2 2 2 2 Value Per diode Per diode Total Total Coupling Coupling 1.6 4 0.9 3.2 0.15 2.5 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. 2 Max. 4.5 6 0.71 0.77 0.81 0.88 Unit A mA V VR = VRRM IF = 8 A IF = 10 A IF = 16 A IF = 20 A IF = 8 A IF = 10 A IF = 16 A IF = 20 A 0.56 0.59 0.65 0.67 0.58 0.64 0.68 0.73 To evaluate the maximum conduction losses use the following equation : P = 0.55 x IF(AV) + 0.009 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 6 4 2 IF(av) (A) 0 0 2 4 6 8 =tp/T T = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 12 Rth(j-a)=Rth(j-c) TO220AB 10 = 1 8 6 4 2 tp Rth(j-a)=15C/W Rth(j-a)=40C/W ISOWATT220AB Tamb(C) 0 12 0 25 50 75 100 125 150 175 10 2/7 STPS20H100CT/CF/CG/CG-1 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK) IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3 140 120 100 Tc=50C Tc=75C Tc=125C Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB). IM(A) 80 60 Tj=50C Tj=75C 40 IM 20 t Tj=125C t =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220AB, D2PAK, I2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 = 0.2 = 0.1 = 0.2 0.2 Single pulse = 0.1 Single pulse tp(s) 1E-2 1E-1 =tp/T tp tp(s) 1E+0 0.0 1E-2 1E-1 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 Tj=150C F=1MHz Tj=25C Tj=125C Tj=100C 500 Tj=25C 200 VR(V) 0 10 20 30 40 50 60 70 80 90 100 100 1 2 5 VR(V) 10 20 50 100 3/7 STPS20H100CT/CF/CG/CG-1 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versuscoppersurfaceundertab (Epoxy printed circuit board FR4, copperthickness: 35m) (D2PAK). Rth(j-a) (C/W) 80 70 Tj=150C Typical values Tj=125C 100.0 IFM(A) 10.0 60 50 40 Tj=25C Tj=125C Typical values 1.0 30 20 10 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 S(Cu) (cm ) 0 5 10 15 20 25 30 35 40 0 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS Millimeters Inches Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Max. Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 4/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Min. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126 16.00 typ. 0.630 typ. 5/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESSTHAN 2mm FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A c2 A1 b b1 D b2 c c2 L1 b2 L b1 b e A1 D e E L L1 c L2 Ordering type STPS20H100CT STPS20H100CF STPS20H100CG-1 STPS20H100CG Marking STPS20H100CT Package TO-220AB Weight 2.20g 2.08g 1.49g 1.48g 1.48g Base qty 50 50 50 50 1000 Delivery mode Tube Tube Tube Tube Tape & reel STPS20H100CF ISOWATT220AB STPS20H100CG STPS20H100CG I2PAK D2PAK D PAK 2 STPS20H100CG-TR STPS20H100CG Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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